deconvolution of xps peak avantage software

The existence of abrupt interfaces, atomic displacements of interface silicon and intermediate oxidation states of silicon are part of different experiments. thermal oxidation and annealing) are so simple conceptually.Īs a result of extreme decrease in the dimensions of Si metal-oxide-semiconductor field effect transistor device (MOSFET), the electronic states in Si/SiO interfacial transition region playa vital role in device operation.

At the same time the understanding of the underlying chemical and physical mechanisms responsible for such perfect structures represents a profound fundamental challenge, one which has a particular scientific significance in that the materials (Si, O) and chemical reaction processes (e.g. The use of thermal oxidation of Si(100) to grow very thin SiO 2 layers (~ 100Ǻ) with extremely high electrical quality of both film and interface is a key element on which has been built the success of modern MOS (metal-oxide-semiconductor) device technology. Native oxidation of silicon is known to have detrimental effects on ultra-large-scale integrated circuit (ULSIC) processes and properties including metal/silicon ohmic contact, the low-temperature epitaxy of silicide and dielectric breakdown of thin SiO 2.

This silicon oxide layer is a high quality electrically insulating layer on the silicon surface, serving as a dielectric in numerous devices that can also be a preferential masking layer in many steps during device fabrication. The ability to form a chemically stable protective layer of silicon dioxide (SiO 2) at the surface of silicon is one of the main reasons that make silicon the most widely used semiconductor material. Due to its dominant role in silicon devices technologies the SiO 2/Si interface has been intensively studied in the last five decades.

Deconvolution of xps peak avantage software